1998. 6. 15 1/2 semiconductor technical data KDS2236M/s variable capacitance diode silicon epitaxial lanar diode revision no : 2 afc application for fm receiver. features high q : q=70(min.) (f=50mhz). low reverse current : i r =100na(max.) (v r =4v). maximum rating (ta=25 1 ) 1 2 to-92m dim millimeters a b c d e f g h j k 1. anode 2. cathode 3.20 max 4.30 max 0.55 max 2.40 0.15 1.27 2.30 14.00 0.50 0.60 max 1.05 1.45 25 0.55 max l m n f a g j k d ee l n m c h 0.80 o 0.75 o b + _ + _ 12 electrical characteristics (ta=25 1 ) characteristic symbol rating unit reverse voltage v r 15 v junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit reverse current i r v r =4v - - 100 na total capacitance c t v r =4v, f=1mhz 7.0 - 14 pf capacitance ratio k (note) 0.21 - 0.5 figure of merit q v r =4v, f=50mhz 70 120 - dim millimeters 1. nc 2. anode 3. cathode sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p 7 2 1 3 + _ type name marking (for kds2236s) lot no. j 3 c t (@v r =2v, f=1mhz)-c t (@v r =4v, f=1mhz) note) k= c t (@v r =4v, f=1mhz) 2236 a lot no. anode marking (for KDS2236M) ac
1998. 6. 15 2/2 KDS2236M/s revision no : 2 ref v (mv) differentiation of capacitance 0.96 50 total capacitance c (pf) t 100 3 1 0.3 0.1 reverse voltage v (v) r -20 junction temperature t ( c) j j t c - t c - v i - v r reverse voltage v (v) 0 r 10 reverse current i (a) reverse voltage v (v) figure of merit q 0.1 0.3 1 3 r 100 q - v rr 246810121416 -12 10 -11 10 -10 10 -9 ta=60 c ta=25 c t r 10 3 5 10 30 f=1mhz ta=25 c 0 20406080 0.98 1.00 1.02 1.04 f=1mhz v =1v v =4v r r r 10 300 500 1k 3k f=50mhz ta=25 c
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